STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP
N-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAK MDmeshTM Power MOSFET
General features
Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP
VDSS (@TJmax) 550V 550V 550V 550V
RDS(on) < 0.25 < 0.25 < 0.25 < 0.25
ID 20A 20A 20A 20A
3 1
3 1 2
1 2 3
TO-220
TO-220FP
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
I²PAK
3 12
D²PAK
Description
The MDmeshTM is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTMhorizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances.
Internal schematic diagram
Applications
Switching applications
Order codes
Part number STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP Marking B20NM50 B20NM50-1 P20NM50 P20NM50FP Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube
January 2007
Rev 13
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www.st.com 14
Contents
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value Parameter D²PAK / I²PAK TO-220 500 30 20 12.6 80 192 1.54 15 -2500 20 (1) 12.6 (1) 80 (1) 45 0.36 Unit TO-220FP V V A A A W W/C V/ns V
VDS VGS ID ID IDM (2) PTOT
Drain source voltage Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor
dv/dt (3) VISO Tj Tstg
Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature Storage temperature
-65 to 150
C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area
3. ISD < 20A, di/dt < 400A/s, VDD < V(BR)DSS, TJ < TJMAX
Table 2.
Symbol
Thermal data
Value Parameter D²PAK / I²PAK TO-220 0.65 62.5 300 Unit TO-220FP 2.8 C/W C/W C
Rthj-case Rthj-amb Tl
Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25C, ID= 5A, VDD= 50V) Value 10 650 Unit A mJ 3/14
Electrical characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 30V VDS= VGS, ID = 250 A VGS= 10 V, ID= 10 A 3 4 0.20 Min. 500 1 10
100
Typ.
Max.
Unit V A A A V
5 0.25
Table 5.
Symbol gfs (1) Ciss Coss Crss Coss eq.
(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Test conditions VDS > ID(ON) x RDS(ON)max, ID = 10A VDS =25V, f=1 MHz, VGS=0 Min. Typ. 10 1480 285 34 Max. Unit S pF pF pF
VGS=0, VDS =0V to 400V f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain VDD=400V, ID = 20A VGS =10V (see Figure 15)
130
pF
Rg Qg Qgs Qgd
Gate input resistance
1.6
Total gate charge Gate-source charge Gate-drain charge
40 13 19
56
nC nC nC
1. Pulsed: pulse duration = 300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD=250 V, ID=10A, RG=4.7, VGS=10V (see Figure 14) VDD=400 V, ID=20A, RG=4.7, VGS=10V (see Figure 16) Min. Typ. 24 16 40 12 9 8.5 23 Max. Unit ns ns ns ns ns ns ns
Table 7.
Symbol ISD ISDM (1) VSD (2) t rr Qrr IRRM t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A, VGS=0 ISD=20A,di/dt=100A/s, VDD=100 V, Tj= 25C (see Figure 16) ISD=20A,di/dt=100A/s, VDD=100 V, Tj=150C (see Figure 16) 350 4.6 26 435 5.9 27 Test conditions Min. Typ. Max 20 80 1.5 Unit A A V ns C A ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration 300s duty cycle 1.5%
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Electrical characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for TO-220/ D²PAK/I²PAK Figure 2. Thermal impedance for TO-220/ D²PAK/I²PAK
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Figure 7. Transconductance Figure 8.
Electrical characteristics Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
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Electrical characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Figure 13. Source-drain diode forward characteristics
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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Test circuit
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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Package mechanical data
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
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Package mechanical data
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
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G
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Revision history
5
Revision history
Table 8.
Date 09-Sep-2004 04-Sep-2006 15-Dec-2006 08-Jan-2007 26-Jan-2007
revision history
Revision 9 10 11 12 13 Final version The document has been reformatted Modified Table 7.: Source drain diode Modified value in order code Modified Table 6.: Switching times Changes
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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
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