DB-960-70W
70W / 26V / 925-960 MHz PA using 2x PD57045S The LdmosST FAMILY
PRELIMINARY DATA
N-CHAN NEL ENHANCEMENT-MODE LATERAL MOSFETs · EXC ELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 70 W min. with 13 dB gain over 925-960 MHz · 10:1 LOAD VSWR CAPABILITY · BeO FREE AMPLIFIER.
DESCRIPTION The DB-960-70W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications. The DB-960-70W is designed in cooperation with Européenne de Télécommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC)
Symbol Parameter Value 32 9 135 -20 to +85 +55 Unit V A W
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ID
V DD
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ORDER CODE DB-960-70W
MECHANICAL SPECIFICATION L=80 mm W=50 mm H=10 mm
Supply voltage Drain Current Power Dissipation Operating Case Temperature Max. Ambient Temperature
PDISS TCASE Pamb
C C
November, 20 2002
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ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200mA)
Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 75 W Over frequency range: 925 - 960 MHz Over frequency range and @ POUT = 75 W POUT from 0.1W to 75W P1dB Input return Loss POUT from 0.1W to 75W POUT = 75 W Load Mismatch all phases @ POUT = 75 W 10:1 VSWR all phases and POUT from 0.1 to 75W POUT = 75 WPEP 10:1 -76 -25 dBc dBc 45 50 -20 -40 -15 -30 Test Conditions Min. 925 12.5 70 13 75 +/- 0.5 1 Typ. Max. 960 Unit MHz dB W dB dB % dB dBc
TYPICAL PERFORMANCE Output Power versus Input Power
Pout (W)
120
960 MHz
Power Gain versus Frequency (Pout = 75W)
Gp (dB)
15
100
940 MHz
14
80
920 MHz
60
40
20
0 0 2 4
Pin (W)
P1dB and Efficiency versus Frequency
P1dB (W)
120
100
O
80
bs
let o
Pr e
du o
P1dB
6
ct
Vdd = 26 V Idq = 2 x 200 mA
(s)
so Ob 12 11 10 910
13
te le
920 930
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Vdd = 26 V Idq = 2 x 200 mA
8
940
950
960
970
F (MHz)
Nd (%)
80
70
60
Eff.
60
50
40
Vdd = 26 V Idq = 2 x 200 mA
40
20 910
920
930
940
950
960
30 970
F (MHz)
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DB-960-70W
TEST FIXTURE COMPONENT LAYOUT
CV1
CV2
TEST CIRCUIT PHOTOMASTER
bs O
let o
Pr e
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(s) ct
so Ob -
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Ref. ETSA c07/2000 - Ed1
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Ref. ETSA c07/2000 - Ed1
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DB-960-70W
TEST CIRCUIT COMPONENT PART LIST
COMPONENT T1, T2 C1, C2, C23, C24 C3, C4 C5, C6, C17, C18 C7, C8, C9, C10, C11, C12, C13, C14 C15, C16 C19, C20 C21, C22 C26, C27 C25 CV1, CV2 P1, P2 R1,R7 R2 R3, R4 R5, R6 D1, D2 SM1, SM2 BOARD SUBSTRATE BACK SIDE CERAMIC CHIP CAPACITORS DESCRIPTION PD57045S TRANSISTOR 47pF - 500V CERAMIC CHIP CAPACITOR 2.2pF - 500V CERAMIC CHIP CAPACITOR 100pF - 500V CERAMIC CHIP CAPACITOR 10pF - 500V CERAMIC CHIP CAPACITOR 100nF - 63V CERAMIC CHIP CAPACITOR 1F / 35V ELECTROLYTIC CAPACITOR 4.7pF - 500V CERAMIC CHIP CAPACITOR 3.3pF - 500V CERAMIC CHIP CAPACITOR 0.5pF - 500V CERAMIC CHIP CAPACITOR ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V 10K Ohms MULTITURN POTENTIOMETER 100 Ohms 1/4W 1206 SMD CHIP RESISTOR 50 Ohms 30W - 4GHz LOAD
4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR 10K Ohms 1/4W 1206 SMD CHIP RESISTOR ZENER DIODE 5V - 500 mW SOD80 90 SMD HYBRID COUPLER ANAREN Xinger 1304-3
bs O
let o
Pr e
du o
(s) ct
so Ob -
METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35
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TEFLON-GLASS Er = 2.55 COPPER FLANGE 2 mm THICKNESS ATC100B or EQUIVALENT
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http ://www.st.com
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Pr e
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