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Low voltage fast-switching NPN power transistor

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Last Updated: 24/01/2008

Pages: 7

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Low-Voltage Power Bipolar Transistor from STMicroelectronics Offers High Gain, Low Saturation Voltage

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STN851
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PRELIMINARY DATA

O r d er i n g Code S T N 85 1
s

M ar k i n g N 85 1

Sh i p m e n t T a p e & Reel

s s s

VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM POWER PACKAGE IN TAPE & REEL

2

1
SOT-223

2

3

APPLICATIONS: EMERGENCY LIGHTING s VOLTAGE REGULATORS s RELAY DRIVERS s HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS
s

DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VC BO VC EO VEBO IC I CM IB IBM P tot Tstg Tj P a r am e t e r C ol l e ct o r - Ba s e Voltage (I E = 0) C ol l e ct o r - Em i t t e r Voltage (I B = 0) Em it t e r- B a s e Voltage (I C = 0) C ol l e ct o r Current C ol l e ct o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T ot a l Dissipation at T a m b = 25 C St o r a ge Temperature M a x. Operating Junction Temperature
o

Value 150 60 7 5 10 1 2 1.6 - 65 to 150 150

U ni t V V V A A A A W
o o

C C

September 2003

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STN851
THERMAL DATA
R t hj- amb T h e r m al Resistance Junction-ambient
2

Max

78

o

C/W

· Device mounted on a P.C.B. area of 1 cm

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l IC BO IEBO V ( B R)C B O P a r a m et e r C o l le c t o r Cut-off C u r re n t (I E = 0) E m i t t er Cut-off Current ( I C = 0) C o l le c t o r- B a s e B r e ak d o w n Voltage ( I E = 0) T e s t Conditions V C B = 120 V V C B = 120 V VEB = 7 V I C = 100 A 150 T j = 100 o C Min. Typ. M a x. 50 1 10 Unit nA A nA V

V ( B R) C E O C o l le c t o r- E m i t te r B r e ak d o w n Voltage ( I B = 0) V (BR )EBO E m i t t er - B as e B r e ak d o w n Voltage ( I C = 0) C o l le c t o r- E m i t te r S a t u ra t i on Voltage

I C = 10 mA

60

V

I E = 100 A

7

V

V C E(s at )

IC IC IC IC

= = = =

100 mA 1A 2A 5A

I B = 5 mA I B = 50 mA I B = 50 mA I B = 200 mA I B = 200 mA VCE = 1 V V CE = 1 V VCE = 1 V VCE = 1 V VCE = 1 V I C = 100 mA f = 1 MHz 150 150 90 30

10 70 140 320 1 0.89 300 270 140 50 130 50

50 120 250 500 1 . 15 1

mV mV mV mV V V

V B E (s at ) V BE(on) h FE

B a s e -E m i t t er S a t u ra t i on Voltage B a s e -E m i t t er On V o l ta g e D C Current Gain

IC = 4 A IC = 4 A IC IC IC IC = = = = 10 mA 2A 5A 10 A

350

fT CC BO

T r a n si t i on frequency C o l le c t o r- B a s e C a p a c it a n c e R E S I S T IV E LOAD T u r n - on Time S t o ra g e Time F a l l Time

V C E = 10 V V C B = 10 V

MHz pF

ton ts tf

IC = 1 A I B 1 = - I B 2 = 0.1 A

V C C = 10 V

50 1.35 120

ns s ns

* Pulsed: Pulse duration = 300s, duty cycle = 1.5 %

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STN851
Derating Curve DC Current Gain

Collector-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

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STN851
Switching Times Resistive Load Switching Times Resistive Load

Switching Times Resistive Load

Switching Times Inductive Load

Switching Times Inductive Load

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STN851
Figure 1: Resistive Load Switching Test Circuit.

1 ) Fast electronic switch 2 ) Non-inductive Resistor

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SOT-223 MECHANICAL DATA
mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. i nch TYP. MAX. 0.071 0.031 0.122 0.013 0.264

DIM.

P008B
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STN851

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. 2003 STMicroelectronics All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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Document Number: 8980



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