STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1
N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESHTMPower MOSFET
TYPE STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1
s s s s s s
VDSS 500 500 500 500 V V V V
RDS(on) < 2.7 < 2.7 < 2.7 < 2.7
ID 3 3 3 3 A A A A
Pw 45 W 20 W 45 W 45 W
3 1 2
TYPICAL RDS(on) = 2.3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VER Y LOW INTR INSIC CAPACITAN CES VER Y GOOD MANUFACTURING REPEATIBILITY
TO-220
TO-220FP
3 1
1
3 2
DPAK
IPAK
DESCRIPTION The SuperMESH TM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly dow n, special care is taken to ensure a very good dv/dt ca pab ility for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
INTERNAL SCHEMATIC D IAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s I DEA L FO R O FF -LINE PO WE R SUP P LI E S, ADAPTORS AND PFC s LI GHT ING
s
ORDERING INFORMATION
SALES TYPE STP4NK50Z STP4NK50ZFP STD4NK50ZT4 STD4NK50Z-1 MARKING P4NK50Z P4NK50ZFP D4NK50Z D4NK50Z PACKAGE TO-220 TO-220FP DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE
December 2002
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ABSOLUTE MAXIMUM RA TINGS
Symbol Parameter
STP4NK50Z
Value
ST P4NK50ZFP STD4NK50Z STD4NK50Z-1
Unit
VDS VD G R V GS ID ID ID M ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 3 1.9 12 45 0.36
500 500 30 3 (*) 1.9 (*) 12 (*) 20 0.16 2800 4.5 2500 -55 to 150 3 (*) 1.9 (*) 12 (*) 45 0.36
V V V A A A W W/C V V/ns V C
( ) Pulse width limited by safe operating area (1) ISD 3 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case (Max) Thermal Resistance Junction-ambient (Max) Maximum Lead Temperature For Soldering Purpose 2.78 62.5 300 TO-220FP 6.25 DPAK IPAK 2.78 100 C/W C/W C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 3 120 Unit A mJ
GATE-SOUR CE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V
PROTECTION FEA TURES OF GATE-TO-SOURCE ZENER DIOD ES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON / OF F
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 50A VGS = 10V, ID = 1.5 A 3 3.75 2.3 Min. 500 1 50 10 4.5 2.7 Typ. Max. Unit V A A A V
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 1.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.5 310 49 10 33 Max. Unit S pF pF pF pF
VGS = 0V, VDS = 0V to 400V
SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 250 V, ID = 1.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400 V, ID = 3 A, VGS = 10 V Min. Typ. 10 7 12 3 7 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 250 V, ID = 1.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 3 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 21 11 10 10 17 Max. Unit ns ns ns ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) tr r Q rr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A, VGS = 0 ISD = 3 A, di/dt = 100A/s VDD = 40 V, Tj = 150C (see test circuit, Figure 5) 260 935 7.2 Test Conditions Min. Typ. Max. 3 12 1.6 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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Safe Operating For TO-220 Thermal Impedance For TO-220
Safe Operating A rea For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating A rea For DPAK/IPAK
Thermal Impedance For DPAK/IPAK
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Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive W aveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
D
F1
G1
E
Dia. L5 L7 L6 L4
P011C
L9
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F2
F
G
H2
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7 ¯
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
i nch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.8 0.024 0
o
0.039 0o
P032P_B
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TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
A
C C2
L2 D
B3
B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions are in millimeters
All dimension s are in millimeters
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12. 8 20. 2 16. 4 50 22. 4 18. 4 13. 2 mm MIN. M AX . 330 0. 059 0. 504 0. 520 0. 795 0. 645 0. 724 1. 968 0. 881 BULK QTY 25 00 inch M I N. M AX . 12.992
TAPE MECHANICAL DATA
D IM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2 500
mm MIN. 6.8 10. 4 1.5 1.5 1. 65 7.4 2. 55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. M AX . 7 0. 267 0. 275 0. 409 0. 417 0. 476 0. 059 0. 063 0. 059 0. 065 0. 073 0. 291 0. 299 0. 100 0. 108 0. 153 0. 161 0.311 0.319 0. 075 0. 082 1. 574 0.618
0.641
MA X. 10.6 12.1 1. 6 1. 85 7. 6 2. 75 4. 1 8. 1 2. 1
* o n s al es t y pe
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the conseq uences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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