STX83003
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s s
s
ST83003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
s
APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX93003, its complementary PNP transistor. TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM IB IBM Ptot Tstg Tj Parameter C o ll e c t o r -E m i t t e r Voltage (V B E = 0) C o ll e c t o r -E m i t t e r Voltage (I B = 0) Em it t e r -B a s e Voltage o (I C = 0, I B = 0.5 A, t p < 10s, T j < 150 C ) C o ll e c t o r Current C o ll e c t o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T o t a l Dissipation at T C = 25 o C St o r a g e Temperature M a x . Operating Junction Temperature Value 700 400 V (BR )EBO 1 3 0.5 1.5 1.5 - 6 5 to 150 150 U ni t V V V A A A A W o C o C
October 2002
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THERMAL DATA
R t h j - c a se R t hj- amb T h e r m a l Resistance Junction-Case T h e r m a l Resistance Junction-Ambient Max Max 83.3 2 00
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE S V (BR )EBO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (V B E = 0) E m i t t e r- B a s e B r e a k d o w n Voltage ( I C = 0) T e s t Conditions V C E = 700V V C E = 700V I E = 10 mA T j = 125 o C 12 Min. Typ. Ma x. 1 5 18 Unit mA mA V
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) V C E(s at ) V B E (s at ) hFE C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r S a t u r a t io n Voltage D C Current Gain
I C = 10 mA L = 25 mH I C = 0.5 A I C = 0.35 A I C = 0.5 A I C = 10 mA I C = 0.35 A IC = 1 A I C = 0.35 A I B 1 = 70 mA T p 25 s I C = 0.5 A V B E ( o f f ) = -5 V V c l a m p = 300 V I B = 0.1 A I B = 50 mA I B = 0.1 A VC E = 5 V VCE = 5 V VC E = 5 V V C C = 125 V I B 2 = -70 mA (see figure 2) I B 1 = 0.1 A L = 10 mH (see figure 1)
400
V
0.5 1 1 10 16 4
V V V
25
32
tr ts tf ts tf
R E S I S T IV E LOAD R i s e Time S t o r a g e Time F a l l Time I N D U C T I V E LOAD S t o r a g e Time F a l l Time
1.5
100 2.2 0.2 450 90
2.9
ns s s ns ns
Pulsed: Pulse duration = 300s, duty cycle = 1.5 %.
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Safe Operating Area Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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Resistive Load Fall Time Resistive Load Storage Time
Inductive Load Fall Time
Inductive Load Storage Time
Reverse Biased SOA
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Figure 1: Inductive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor 3 ) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor
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TO-92 MECHANICAL DATA
mm MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 1.14 0.41 4 degree TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 6 degree MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.045 0.016 4 degree inch TYP. MAX. 0.195 0.020 0.194 0.155 0.105 0.055 0.609 0.094 0.059 0.022 6 degree
DIM.
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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