STD2NC45-1 STQ1NC45R-AP
N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESHTM Power MOSFET
General features
Type STD2NC45-1 STQ1NC45R-AP
VDSS 450V 450V
RDS(on) <4.5 <4.5
ID 1.5A 0.5A
Pw 30W 3.1W
3 2 1
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark IPAK
TO-92 (ammopak)
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products.
Internal schematic diagram
Applications
Switching application Switch mode low power supplies (SMPS) Low power, low cost CFL (compact fluorescent lamps) Low power battery chargers
Order codes
Part number STD2NC45-1 STQ1NC45R-AP Marking D2NC45 Q1NC45R Package IPAK TO-92 Packaging Tube Ammopak
July 2006
Rev 3
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Contents
STD2NC45-1 - STQ1NC45R-AP
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STD2NC45-1 - STQ1NC45R-AP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Value Parameter IPAK Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 1.5 0.95 6 30 0.24 3 65 to 150 Max. operating junction temperature C 450 30 0.5 0.315 2 3.1 0.025 TO-92 V V A A A W W/C V/ns C Unit
PTOT
(2)
dv/dt
Peak diode recovery voltage slope Storage temperature
Tstg Tj
1. Pulse width limited by safe operating area 2. ISD < 0.5A, di/dt < 100 A/s, VDD =80% V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-amb Rthj-lead Tl
Thermal data
Value Parameter IPAK Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-lead max Maximum lead temperature for soldering purpose 4.1 100 -275 TO-92 -120 40 260 C/W C/W C/W C Unit
Table 3.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (star ting Tj=25C, ID=IAS, VDD=50V) Value 1.5 25 Unit A mJ
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Electrical characteristics
STD2NC45-1 - STQ1NC45R-AP
2
Electrical characteristics
(TCASE = 25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 250A, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 0.5A 2.3 3 4.1 Min. 450 1 50 100 3.7 4.5 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test condictions VDS > ID(on) x RDS(on)max, ID = 0.5A Min. Typ. 1.1 160 27.5 4.7 7 1.3 3.2 Max. Unit S pF pF pF nC nC nC
VDS = 25V, f = 1 MHz, VGS = 0
VDD = 360V, ID = 1.5A, VGS = 10V, RG = 4.7 (see Figure 18)
10
1. Pulsed: pulse duration = 300 s, duty cycle 1.5 %
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STD2NC45-1 - STQ1NC45R-AP
Electrical characteristics
Table 6.
Symbol td(on) tr tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test condictions VDD = 225V, ID = 0.5A RG = 4.7 VGS = 10V (see Figure 17) VDD = 360V, ID = 1.5A, RG = 4.7, VGS = 10V (see Figure 17) Min. Typ. 6.7 4 8.5 12 18 Max. Unit ns ns ns ns ns
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.5A, VGS = 0 ISD = 1.5A, di/dt = 100A/s VDD = 100V, Tj = 150C (see Figure 22) 225 530 4.7 Test condictions Min Typ. Max Unit 1.5 6.0 1.6 A A V ns C A
VSD (2) t rr Qrr IRRM
1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 s, duty cycle 1.5 %
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Electrical characteristics
STD2NC45-1 - STQ1NC45R-AP
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for IPAK Figure 2. Thermal impedance for IPAK
Figure 3.
Safe operating area for TO-92
Figure 4.
Thermal impedance for TO-92
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
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STD2NC45-1 - STQ1NC45R-AP Figure 7. Transconductance Figure 8.
Electrical characteristics Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
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Electrical characteristics Figure 13. Source-drain diode forward characteristics
STD2NC45-1 - STQ1NC45R-AP Figure 14. Normalized BVDSS vs temperature
Figure 15. Max Id current vs Temperature
Figure 16. Maximum avalanche energy vs temperature
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STD2NC45-1 - STQ1NC45R-AP
Test circuit
3
Test circuit
Figure 18. Gate charge test circuit
Figure 17. Switching times test circuit for resistive load
Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
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Package mechanical data
STD2NC45-1 - STQ1NC45R-AP
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STD2NC45-1 - STQ1NC45R-AP
Package mechanical data
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
C A C2
L2
D
B3 B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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Package mechanical data
STD2NC45-1 - STQ1NC45R-AP
TO-92 MECHANICAL DATA
mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5 TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch
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STD2NC45-1 - STQ1NC45R-AP
Package mechanical data
TO-92 AMMOPACK
mm. MIN. 4.45 3.30 TYP MAX. 4.95 3.94 1.6 2.3 0.41 12.5 5.65 2.44 -2 17.5 5.7 8.5 18.5 15.5 3.8 16 4 18 6 9 12.7 6.35 2.54 0.56 12.9 7.05 2.94 2 19 6.3 9.25 0.5 20.5 16.5 25 4.2 0.9 11 3 -1 1 0 .11 -0.04 0.04 0.15 0.157 0.72 0.61 0.63 0.016 0.49 0.22 0.09 -0.08 0.69 0.22 0.33 0.71 0.23 0.35 0.5 0.25 0.1 MIN. 0.170 0.130 inch TY P . MAX. 0.194 0.155 0 .06 0 .09 0.022 0.51 0.27 0.11 0.08 0.74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43
DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P
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Revision history
STD2NC45-1 - STQ1NC45R-AP
5
Revision history
Table 8.
Date 21-Jun-2004 12-Jul-2006
Revision history
Revision 2 3 Complete version New template Changes
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STD2NC45-1 - STQ1NC45R-AP
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