STGB7NB40LZ
N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESHTM IGBT
TYPE STGB7NB40LZ
s s s s s s
V CE S CLAMPED
VCE(sat) < 1.50 V
IC 14 A
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATU RE
3 1
D2PAK
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s A UTO MO TI V E IG NI TI ON
ABSOLUTE MAXIMUM RA TINGS
Symbol VCES VECR V GE IC RG PTOT EC L EECAV Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 100C Minimum External Gate Resistor Total Dissipation at TC = 25C Derating Factor Single Pulse Collector to Emitter Avalanche Energy IC= 13 A ; Tj= 150C (see fig.1-2) Reverse Avalanche Energy IC = 7 A ;f= 100 Hz ; Tc = 25C Storage Temperature Operating Junction Temperature Value CLAMPED 20 CLAMPED 14 500 100 0.66 130 10 Unit V V V A W W/C mJ mJ
55 to 175
C
March 2003
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STGB7NB40LZ
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max (free air) 1.5 62.5 C/W C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25C UNLESS OTHER WISE SPECIFIED) OFF
Symbol BV(CES) BV(ECS) BVGE ICES Parameter Collector-Emitter Clamped Voltage Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 10 mA, VGE = 0, Tc= - 40C to 150C; RG= 1 K IEC = 75 mA, VGE = 0, IG = 2 mA VGE = 200 V, VGE = 0, RG= 1 K Tc=25C Tc=150C VGE = 10 V , VCE = 0 Min. 370 20 12 Typ. 400 27 16 Max. 430 Unit V V V
25 250 1000
A A A
IGES
ON ( 1 )
Symbol VGE(th) VCE(SAT) RG E Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Gate Emitter Resistance Test Conditions VCE = VGE, IC = 1 mA, Tc=25C VCE = VGE, IC = 1 mA, Tc=150C VGE =4.5 V, IC = 7 A, Tj= 25C VGE =5.0 V, IC = 14 A, Tc= 25C 10 Min. 1.2 0.75 1.3 20 Typ. Max. 2.2 1.8 1.50 1.9 30 Unit V V V V K
DYN AMIC
Symbol Cies Coes Cres Qg Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge VCE = 40 V, IC = 7 A, VGE = 5 V Test Conditions VCE = 25 V, f = 1 MHz, VGE = 0 Min. Typ. 910 80 15 22 Max. Unit pF pF pF nC
SW ITCHIN G ON
Symbol td(on) tr td(off) tf Parameter Delay Time Current Rise Time Delay Time Current Fall Time Test Conditions VCE = 14 V, RG =1K , RL = 1, VGE =5 V VCE = 300 V, RG =1K , RL = 46, VGE =5 V Min. Typ. 0.9 4.5 4.4 3.6 Max. Unit s s s s
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STGB7NB40LZ
Thermal Impedance
Output Characteristics
Transfer Characteristics
Normalized Gate Threshold Voltage vs Temp.
Transconductance
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STGB7NB40LZ
Normalized Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Gate-Emitter Voltage
Capacitance Variations
Gate-Charge vs Gate-Emitter Voltage
Normalized Break-down Voltage vs Temp.
Clamping Voltage vs Gate Resistance
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STGB7NB40LZ
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive W aveform
Fig. 3: Test C ircuit For Inductive Load Switching And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
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STGB7NB40LZ
D2PAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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1
STGB7NB40LZ
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX. 330 0.059 0.504 0.520 07 95 0.960 1.039 3.937 1. 197 BU LK QTY 1000 inch MIN. M AX . 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1. 5 1. 59 1. 65 11.4 4. 8 3. 9 11.9 1. 9 50 0. 25 23.7 24.3 M AX . 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 inch M I N. M AX . 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1. 574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STGB7NB40LZ
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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