STP60NS04ZB
N-channel clamped - 10m - 60A - TO-220 Fully protected Mesh OverlayTM Power MOSFET
General features
Type STP60NS04ZB
VDSS Clamped
RDS(on) < 0.015
ID 60A
100% avalanche tested Low capacitance and gate charge 175 C maximum junction temperature
TO-220
1 2 3
Description
This fully clamped Power MOSFET is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP60NS04ZB Marking P60NS04ZB Package TO-220 Packaging Tube
October 2006
Rev 2
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Contents
STP60NS04ZB
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDG IGS IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain gate current (continuous) Gate source current (continuous) Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value Clamped Clamped 60 42 50 50 240 150 1 6 4 4 Unit V V A A mA mA A W W/C KV KV KV
Ptot
VESD(G-S) VESD(G-D) VESD(D-S) Tstg Tj
Gate-source ESD (HBM - C = 100pF, R=1.5 k) Gate-drain ESD (HBM - C = 100pF, R=1.5 k) Drain-source ESD (HBM - C = 100pF, R=1.5 k) Storage temperature
-65 to 175 Max. operating junction temperature
C
1. Pulse width limited by safe operating area.
Table 2.
Rthj-case Rthj-amb TJ
Thermal data
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1 62.5 300 C/W C/W C
Symbol IAR EAS
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (star ting Tj = 25 C, ID = IAR, VDD = 30 V)
Max Value 60 400
Unit A mJ
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Electrical characteristics
STP60NS04ZB
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS I DSS IGSS VGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS =0 -40 < Tj < 175C VDS = 16V; TJ =150C VDS = 16V; TJ =175C VGS = 10V;Tj =175C VGS = 16V;Tj =175C IGS = 100A VDS = VGS, ID = 1mA -40 < TJ < 150C VGS = 10V, ID = 30A VGS = 16V, ID = 30A 18 1.7 3 11 10 4.2 15 14 Min. 33 50 100 50 150 Typ. Max. Unit V A A A A V V m m
Table 4.
Symbol gfs (1) Ciss Coss Crss tr(Voff) tf tc Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Fall time Cross-over time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS= 15V, ID=30A Min. 20 Typ. 40 1700 800 190 60 45 100 48 13 16 2100 1000 240 75 60 130 42 Max. Unit S pF pF pF ns ns ns nC nC nC
VDS = 25V, f = 1MHz, VGS = 0 Vclamp = 30V, ID = 60A RG = 4.7 VGS = 10V (see Figure 14) VDD = 18V, ID = 60A, VGS = 10V, RG = 4.7 (see Figure 15)
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
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Electrical characteristics
Table 5.
Symbol ISD ISDM (1) VSD (2) t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 60A, VGS = 0 50 62 2.6 Test conditions Min. Typ. Max. 60 240 1.5 Unit A A V ns nC A
Reverse recovery time ISD = 60A, di/dt = 100A/s, Reverse recovery charge VDD = 15V, Tj = 150C Reverse recovery current (see Figure 16)
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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Electrical characteristics
STP60NS04ZB
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STP60NS04ZB Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Zero gate voltage drain current vs temperature
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Electrical characteristics Figure 13. Normalized BVDSS vs temperature
STP60NS04ZB
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STP60NS04ZB
Test circuit
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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Package mechanical data
STP60NS04ZB
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STP60NS04ZB
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
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Revision history
STP60NS04ZB
5
Revision history
Table 6.
Date 21-Jun-2004 04-Oct-2006
Revision history
Revision 1 2 Complete document New template, no content change Changes
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STP60NS04ZB
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