STB11NM80 - STF11NM80 STP11NM80 - STW11NM80
N-channel 800 V - 0.35 - 11 A - TO-220/FP- D2PAK - TO-247 MDmeshTM Power MOSFET
Features
Type STB11NM80 STF11NM80 STP11NM80 VDSS 800 V 800 V 800 V RDS(on) < 0.40 < 0.40 < 0.40 < 0.40 RDS(on)*Qg 14*nC 14*nC 14*nC 14*nC ID 11 A 11 A 11 A 11 A
3 1
TO-247
D²PAK
STW11NM80 800 V
Low input capacitance and gate charge Low gate input resistance Best RDS(on) *Qg in the industry
3 1 2
3 1 2
TO-220
TO-220FP
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
The MDmeshTM associates the multiple drain process with the Company's PowerMeshTM horizontal layout assuring an outstanding low onresistance. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
Table 1.
Device summary
Marking B11NM80 F11NM80 P11NM80 W11NM80 Package D²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube
Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80
December 2007
Rev 9
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www.st.com 17
Contents
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5 6
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value Symbol Parameter TO-220/D²PAK/ TO-247 VDS VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor VISO TJ Tstg Insulation withstand voltage (DC) Operating junction temperature Storage temperature 11 8 44 150 1.2 --65 to 150 800 30 11 (1) 8 (1) 44 (1) 35 0.28 2500 Unit TO-220FP V V A A A W W/C V C
1. Limited only by the maximum temperature allowed 2. Pulse width limited by safe operating area
Table 3.
Thermal data
Value
Symbol
Parameter
TO-220/D²PAK/ TO-247
Unit TO-220FP 3.6 C/W C/W C
Rthj-case Rthj-a Tl
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
0.83 62.5 300
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (star ting Tj=25C, Id=Iar, Vdd=50 V) Value 2.5 400 Unit A mJ
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Electrical characteristics
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 30 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 5.5 A 3 4 0.35 Min. 800 10 100 100 5 0.40 Typ. Max. Unit V A A nA V
Table 6.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID= 7.5A VDS =25 V, f=1 MHz, VGS=0 VDD=640 V, ID = 11 A VGS =10 V (see Figure 10) f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain VDD=400 V, ID= 5.5 A, RG=4.7 , VGS=10 V (see Figure 17) Min. Typ. 8 1630 750 30 43.6 11.6 21 Max. Unit S pF pF pF nC nC nC
Gate input resistance
2.7
Turn-on delay time Rise time Turn-off delay time Fall time
22 17 46 15
ns ns ns ns
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Electrical characteristics
Table 7.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, VGS=0 ISD=11 A, di/dt = 100 A/s, VDD=50 V, Tj=25 C ISD=11 A, di/dt = 100 A/s, VDD=50 V, Tj=150 C 612 7.22 23.6 970 11.25 23.2 Test conditions Min Typ. Max 11 44 0.86 Unit A A V ns C A ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 / D²PAK / TO-247 Figure 3. Thermal impedance for TO-220 / D²PAK / TO-247
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Figure 7.
Output characteristics
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Figure 8. Transfer characteristics Figure 9.
Electrical characteristics Transconductance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs temperature
Figure 13. Static drain-source on resistance
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Electrical characteristics Figure 14. Source-drain diode forward characteristics
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Figure 15. Normalized on resistance vs temperature
Figure 16. Normalized BVDSS vs temperature
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Test circuit
3
Test circuit
Figure 18. Gate charge test circuit
Figure 17. Switching times test circuit for resistive load
Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
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Package mechanical data
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
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Package mechanical data
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 T YP M AX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Package mechanical data
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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Package mechanical data
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
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G
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Packaging mechanical data
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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Revision history
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
6
Revision history
Table 8.
Date 30-Sep-2004 26-Nov-2005 07-Apr-2006 15-May-2006 20-Jul-2006 20-Dec-2007
Revision history
Revision 4 5 6 7 8 9 Preliminary version Complete version Modified value on Figure 8 New dv/dt value on Table 5 The document has been reformatted Updated ID value on Table 2: Absolute maximum ratings Changes
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
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