Datasheets | Transistors | Transistors, Power Bipolar | Low Voltage - High Performance

Medium current, high performance, low voltage PNP transistor

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Last Updated: 25/01/2008

Pages: 6

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STN749
MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

O rd e r i n g Code STN749
s

Marking N749

s s s

s

VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS AVAILABLE IN TAPE AND REEL PACKING

2

1
SOT-223

2

3

APPLICATIONS POWER MANAGEMENT IN PORTABLE EQUIPMENT s VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS s HEAVY LOAD DRIVER
s

INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

ABSOLUTE MAXIMUM RATINGS
Symbol VC BO VC EO VEBO IC I CM P tot Tstg Tj Parameter C o ll e c t o r -B a s e Voltage (I E = 0) C o ll e c t o r -E m i t t e r Voltage (I B = 0) Em it t e r -B a s e Voltage (I C = 0) C o ll e c t o r Current C o ll e c t o r Peak Current (t p < 5 ms) T o t a l Dissipation at T a m b = 25 o C St o r a g e Temperature M a x . Operating Junction Temperature Value -35 -25 -5 -3 -6 1.6 - 6 5 to 150 150 Unit V V V A A W
o o

C C

March 2003

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STN749
THERMAL DATA
R t hj-a mb · T h e r m a l Resistance Junction-Ambient
2

Max

78

o

C/W

· Device mounted on a PCB area of 1 cm .

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol IC BO IEBO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (I E = 0) E m i t t e r Cut-off Current ( I C = 0) T e s t Conditions V C B = -30 V V C B = -30 V V E B = -4 V I C = -10 mA -25 T j = 100 o C Min. Typ. Ma x. -100 -1 0 -100 Unit nA A nA V

V ( B R) C E O C o l l e c t o r- E m i t te r B r e a k d o w n Voltage (I B = 0) V ( B R)C B O C o l l e c t o r- B a s e B r e a k d o w n Voltage (I E = 0) E m i t t e r- B a s e B r e a k d o w n Voltage ( I C = 0) C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r S a t u r a t io n Voltage B a s e - E m i tt e r Turn-On Voltage D C Current Gain

I C = -100 A

-35

V

V (BR )EBO

I E = -100 A

-5

V

V C E(s at ) V B E (s at ) V BE(on) hFE

I C = -1A I C = -3A I C = -1 A I C = -1 A IC IC IC IC = = = = -50 mA -1 A -2 A -6 A

I B = -100 mA I B = -300 mA I B = -100 mA V C E = -2 V V C E = -2 V V C E = -2 V V C E = -2 V V C E = -2V 70 100 75 15

-0 .3 -0 .6 -1 . 2 5 -1

V V V V

30 0

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

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STN749
DC Current Gain DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Switching Times Resistive Load

Switching Times Resistive Load

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STN749
Figure 1: Resistive Load Switching Test Circuit.

1 ) Fast electronic switch 2 ) Non-inductive Resistor

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STN749

SOT-223 MECHANICAL DATA
mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. i nch TYP. MAX. 0.071 0.031 0.122 0.013 0.264

DIM.

P008B
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STN749

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Document Number: 9304



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