PD54008L
RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY
ADVANCED DATA
N-CHAN NEL ENHANCEMENT-MODE LATERAL MOSFETs
· EXC ELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz · NEW LEADLESS PLASTIC PACKAGE · ESD PROTECTION · SUPPLIED IN TAPE & REEL OF 3K UNITS
PowerFLATTM(5x5) ORDER CODE PD54008L
DESCRIPTION The PD54008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLATTM. PD54008L's superior linearity performance makes it an ideal solution for portable radio.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol Parameter Value 25 -0.5 to +15 5 26.7 150 -65 to +150 Unit V V A W C C
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ID Tj
V(BR)DSS V GS
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PIN CONNECTION
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TOP VIEW
Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70C)
PDISS TSTG
Max. Operating Junction Temperature Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 3 C/W
May, 28 2003
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PD54008L
ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC (Per Section)
Symbol IDSS IGSS VGS(Q) VDS(ON) CISS CO S S CRSS VGS = 0 V VGS = 5 V VDS = 10 V VGS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions VDS = 25 V VDS = 0 V ID = 50 mA ID = 0.5 A VDS = 7.5 V VDS = 7.5 V VDS = 7.5 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 0.09 80 60 6.6 Min. Typ. Max. 1 1 5.0 Unit A A V V pF pF pF
DYN AMIC
Symbol P1dB GPS D Load mismatch VDD = 7.5 V VDD = 7.5 V VDD = 7.5 V Test Conditions IDQ = 200 mA IDQ = 200 mA IDQ = 200 mA P O UT = 8 W P O UT = 8 W P O UT = 8 W f = 500 MHz f = 500 MHz f = 500 MHz f = 500 MHz Min. 8 15 50 20:1 Typ. Max. Unit W
VDD = 9.5 V IDQ = 200 mA ALL PHASE ANGLES
IMPEDANCE DATA (1) D
ZDL
Typical Input Impedance Typical Drain Load Impedance
G Zin
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ESD PROTECTION CHARACTERISTICS
Test Conditions Class 2 M3 Human Body Model Machine Model
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FREQ. (MHz) 480 500 520
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% ZDL ()
dB
VSWR
ZIN ()
1.12 - j 2.02 1.3 - j 2.01 1.66 - j 2.55
2.01 + j 0.13 1.84 + j 0.7 1.66 + j 1.51
(1) In Broadband amplifier
MOISTURE SENSITIVITY LEVEL
Test Methodology J-STD-020B Rating MSL 3
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PD54008L
TYPIC AL PERFORMANCE Power Gain Vs Output Power
20 Idq = 200 mA 19 18
Efficiency Vs Output Power
80 70 60
17 Idq = 150 mA 16 Gp (dB) Idq = 100 mA 15 14 13
50 Nd (%) 40 30 20
12 11 10 0 1 2 3 4 5 Pout (W) 6 7 8 9 10 f = 500 MHz Vds = 7.5 V
10 0 0 1 2 3 4 5 Pout (W) 6 7
Idq = 200 mA f = 500 MHz Vds = 7.5 V
8
9
10
Return Loss Vs Output Power
0
Capacitance Vs Supply Voltage
1000
-5
-10 RL (dB)
100 C (pF)
-15
-20 Idq = 200 mA f = 500 MHz Vds = 7.5 V
-25
-30 0 1 2 3 4 5 Pout (W) 6 7
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10
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f = 1 MHz
Coss
Crss
0
1
3
4 5 Vds (V)
6
7
8
9
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PD54008L
TYPIC AL PERFORMANCE Power Gain Vs Frequency (BROADBAND)
14
Efficiency Vs Frequency (BROADBAND)
70
12
60
10
50
Gp (dB)
6
Nd (%)
8
40
30
4
20
2 Idq = 150 mA Pin = 26 dBm 0 470 480 490 500 f (MHz) 510 520 530
10 Idq = 150 mA Pin = 26 dBm 0 470 480 490 500 f (MHz) 510 520 530
Return Loss Vs Frequency (BROADBAND)
0
-4
-8 RL (dB)
-12
-16
-20 470
480
490
500 f (MHz)
510
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Idq = 150 mA Pin = 26 dBm 520
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PD54008L
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
C O M PO N E NT B 1, B2 C 1, C16 C 2, C3, C4, C13,C14 C 15 C5 C6 C7 C 8, C17 C9 C 10, C18 C 11, C19 C 12, C20 C 21 L R1 R3 R4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z 10 Z 11 N 1, N2 B oard F e r r i te bead 3 0 0 pF, 100 mil ATC 1 -:- 20 pF Trimmer cap - JOHANSON 0.8 -:- 10 pF Trimmer cap - JOHANSON 3 6 pF, 100 mil ATC 5 1 pF, 100 mil ATC 6 2 pF, 100 mil ATC 1 5 0 pF, 100 mil CHIP CAP 1 nF, 100 mil CHIP CAP D E S C R IP T IO N
1 0 0 0 pF, 100 mil CHIP CAP
0 .1 nF, 100 mil CHIP CAP 1 0 F 50 V Electrolytic Capacitor 1 5 pF, 100 mil ATC
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4 3 n H , Coilcraft 3 3 K , 1W CHIP Resistor 1 K , 1W CHIP Resistor 0 .4 9 " X 0.080" MICROSTRIP 1 .0 2 4 " X 0.080" MICROSTRIP 0 .0 7 9 " X 0.080" MICROSTRIP 0 .2 4 " X 0.223" MICROSTRIP 0 .0 7 9 " X 0.223" MICROSTRIP 0 .1 3 8 " X 0.223" MICROSTRIP 0 .2 5 9 " X 0.223" MICROSTRIP 0 .0 7 9 " X 0.080" MICROSTRIP 0 .4 1 3 " X 0.080" MICROSTRIP 0 .7 5 6 " X 0.080" MICROSTRIP 0 .6 1 " X 0.080" MICROSTRIP T y p e N Flange Mount R O G E R, ULTRA LAM 2000 THK 0.030", r = 2.55 2oz. ED cu SIDES
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1 5 , 1W CHIP Resistor
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PD54008L
TAPE & REEL DIMENSIONS
mm MIN. Ao Bo Ko 5.15 5.15 1.0 TYP. 5.25 5.25 1.1 MAX 5.35 5.35 1.2
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PD54008L PowerFLATTM MECHANICAL DATA
DIM .
A A1 A3 AA b c D d E E2 e f g h 2.49 0.15 0.43 0.64 mm MIN. TYP. 0.90 0.02 0.24 0.25 0.51 0.71 5.00 0.30 5.00 2.57 1.27 3.37 0.74 0.21 2.64 0.098 0.35 0.58 0.79 0.006 0.017 0.025 MAX 1.00 0.05 MIN. Inch TYP. 0.035 0.001 0.009 0.01 0.020 0.028 0.197 0.011 0.197 0.101 0.050 0.132 0.03 0.008 0.104 0.014 0.023 0.031 MAX 0.039 0.002
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PD54008L
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. h ttp://www.st.com
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