STSA1805
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PRELIMINARY DATA
Ordering Code S T S A 1 8 05 S T SA 1 8 0 5- A P
s
M a rk i n g S A 18 0 5 S A 18 0 5
P a c k ag e / Shipment T O- 9 2 / Bulk T O - 92 / Ammopack
s s
VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED
APPLICATIONS: EMERGENCY LIGHTING s VOLTAGE REGULATORS s RELAY DRIVERS s HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS
s
TO-92 Bulk
DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VC BO VC EO VEBO IC I CM IB P tot Tstg Tj P a r am e t e r C ol l e ct o r - Ba s e Voltage (I E = 0) C ol l e ct o r - Em i t t e r Voltage (I B = 0) Em it t e r- B a s e Voltage (I C = 0) C ol l e ct o r Current C ol l e ct o r Peak Current (t p < 5 ms) Ba s e Current T ot a l Dissipation at T a m b = 25 o C St o r a ge Temperature M a x. Operating Junction Temperature Value 150 60 7 5 15 2 1.1 - 65 to 150 150 U ni t V V V A A A W
o o
C C
September 2003
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STSA1805
THERMAL DATA
R t hj- amb R t h j - c a se T h e r m al Resistance Junction-Ambient T h e r m al Resistance Junction-case Max Max 114 83.3
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l IC BO IEBO V ( B R)C B O P a r a m et e r C o l le c t o r Cut-off C u r re n t (I E = 0) E m i t t er Cut-off Current ( I C = 0) C o l le c t o r- B a s e B r e ak d o w n Voltage ( I E = 0) T e s t Conditions V C B = 40 V VEB = 4 V I C = 100 A 150 Min. Typ. M a x. 0.1 0.1 Unit A A V
V ( B R) C E O C o l le c t o r- E m i t te r B r e ak d o w n Voltage ( I B = 0) V (BR )EBO E m i t t er - B as e B r e ak d o w n Voltage ( I C = 0) C o l le c t o r- E m i t te r S a t u ra t i on Voltage
I C = 1 mA
60
V
I E = 100 A
7
V
V C E(s at )
IC IC IC IC
= = = =
100 mA 2A 3A 5A
I B = 5 mA I B = 50 mA I B = 150 mA I B = 200 mA I B = 100 mA V CE = 2 V VCE = 2 V V CE = 2 V I C = 50 mA f = 1 MHz 200 85 20
150 200 0.9
50 300 400 600 1.2 400
mV mV mV mV V
V B E (s at ) h FE
B a s e -E m i t t er S a t u ra t i on Voltage D C Current Gain
IC = 2 A I C = 100 mA IC = 5 A I C = 10 A V C E = 10 V V C B = 10 V
fT CC BO
T r a n si t i on frequency C o l le c t o r- B a s e C a p a c it a n c e R E S I S T IV E LOAD T u r n - on Time S t o ra g e Time F a l l Time
150 50
MHz pF
ton ts tf
IC = 1 A I B 1 = - I B 2 = 0.1 A
V C C = 30 V
50 1.35 120
ns s ns
* Pulsed: Pulse duration = 300s, duty cycle = 1.5 %
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Derating Curve DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
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Switching Times Resistive Load Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Inductive Load
Switching Times Inductive Load
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Figure 1: Resistive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor
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STSA1805
TO-92 MECHANICAL DATA
mm MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 1.14 0.41 4 degree TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 6 degree MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.045 0.016 4 degree inch TYP. MAX. 0.195 0.020 0.194 0.155 0.105 0.055 0.609 0.094 0.059 0.022 6 degree
DIM.
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STSA1805
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P mm TYP. inch TYP.
MIN.
12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80
12.70 6.35 2.54 18.00 6.00 9.00
16.00 4.00
MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00
MIN.
0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.728 0.610 0.150
0.500 0.250 0.100 0.709 0.236 0.354
0.630 0.157
MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 0.039
3.00 -1.00
0.118 -0.039
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. 2003 STMicroelectronics All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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