STB12NK80Z STP12NK80Z - STW12NK80Z
N-channel 800V - 0.65 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESHTM Power MOSFET
Features
Type STB12NK80Z STP12NK80Z STW12NK80Z
VDSS RDS(on) (@Tjmax) 800V 800V 800V
ID
PW
<0.75 10.5 A 190W <0.75 10.5 A 190W <0.75 10.5 A 190W TO-220
3 1
3 1 2
TO-247
Extremely high dv/dt capability Improved esd capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing reliability
D2PAK
Internal schematic diagram
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Application
Switching application
Order codes
Part number STB12NK80Z STP12NK80Z STW12NK80Z Marking B12NK80Z P12NK80Z W12NK80Z Package D2PAK TO-220 TO-247 Packaging Tape & reel Tube Tube
April 2007
Rev 6
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Contents
STB12NK80Z - STP12NK80Z - STW12NK80Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5 6
Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM(1) PTOT dv/dt(2) TJ Tstg
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Peak diode recovery voltage slope Operating junction temperature Storage temperature Value 800 800 30 10.5 6.6 42 190 1.51 4.5 -55 to 150 Unit V V V A A A W W/C V C
1. Pulse width limited by safe operating area 2. ISD 10.5 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX
Table 2.
Symbol
Thermal data
Value Parameter TO-220/ D²PAK 0.66 62.5 300 50 Unit TO-247 C/W C/W C
Rthj-case Rthj-a Tl
Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose
Table 3.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (star ting Tj=25C, Id=Iar, Vdd=50V) Value 10.5 400 Unit A mJ
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Electrical characteristics
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2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Peak diode recovery voltage slope Test conditions ID = 1mA, VGS= 0 VDS =Max rating, VDS =Max rating, Tc=125C Min. 800 1 50
10
Typ.
Max.
Unit V A A A V
IDSS
IGSS VGS(th) RDS(on)
Gate body leakage current VGS = 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS= VGS, ID = 100A VGS= 10V, ID = 5.25A 3 3.75 0.65
4.5 0.75
Table 5.
Symbol gfs
(1)
Dynamic
Parameter Test conditions Min. Typ. 12 2620 250 53 100 87 14 44 30 18 70 20 16 15 28 Max. Unit S pF pF pF pF nC nC nC ns ns ns ns ns ns ns
Forward transconductance VDS =15V, ID = 5.25A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Off-voltage rise time Fall time Off voltage rise time Fall time Cross-over time
Ciss Coss Crss Cosseq(2) Qg Qgs Qgd td(on) tr td(off) tf tr(Voff) tf tc
VDS =25V, f=1 MHz, VGS=0
VGS=0, VDS =0V to 640V VDD=640V, ID = 10.5A VGS =10V (see Figure 18) VDD=400 V, ID= 5.25A, RG=4.7, VGS=10V (see Figure 19) VDD=640 V, ID= 10.5A, RG=4.7, VGS=10V (see Figure 19)
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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Electrical characteristics
Table 6.
Symbol ISD ISDM VSD
(1) (2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10.5A, VGS=0 ISD=10.5A, di/dt = 100A/s, VDD=100V, Tj=150C 635 5.9 18.5 Test conditions Min Typ. Max 10.5 42 1.6 Unit A A V ns C A
t rr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 7.
Symbol BVGSO(1)
Gate-source zener diode
Parameter Gate-Source breakdown voltage Test conditions Igs=1mA (Open drain) Min 30 Typ. Max Unit V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for TO-220/ D²PAK Figure 2. Thermal impedance for TO-220/ D²PAK
Figure 3.
Safe operating area for TO-247
Figure 4.
Thermal impedance for TO-247
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
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STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 7. Transconductance Figure 8.
Electrical characteristics Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
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Electrical characteristics Figure 13. Source-drain diode forward characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 14. Normalized BVDSS vs temperature
Figure 15. Maximum avalanche energy vs temperature
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Test circuit Package mechanical data
3
Test circuit Package mechanical data
Figure 17. Gate charge test circuit
Figure 16. Switching times test circuit for resistive load
Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit
Figure 20. Unclamped inductive waveform
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Package mechanical data
STB12NK80Z - STP12NK80Z - STW12NK80Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Package mechanical data
STB12NK80Z - STP12NK80Z - STW12NK80Z
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 T YP M AX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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Packing mechanical data
STB12NK80Z - STP12NK80Z - STW12NK80Z
5
Packing mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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Revision history
6
Revision history
Table 8.
Date 22-Jun-2004 28-Jan-2005 08-Sep-2005 31-Jul-2006 27-Apr-2007
Revision history
Revision 2 3 4 5 6 Preliminary version Complete version Figure 1 and Figure 3 changed The document has been reformatted Modified Rds(on) value on Table 4 Changes
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STB12NK80Z - STP12NK80Z - STW12NK80Z
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