STGB10NB40LZ
N-CHANNEL CLAMPED 20A - D˛PAK INTERNALLY CLAMPED PowerMESHTM IGBT
TYPE STGB10NB40LZ
s s s s s s
V CE S CLAMPED
VCE(sat) < 1.8 V
IC 20 A
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATU RE
3 1
D2 P AK
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s A UTO MO TI V E IG NI TI ON
ORDERING INFORMATION
SALES TYPE STGB10NB40LZT4 MARKING GB10NB40LZ PACKAGE D2PAK PACKAGING TAPE & REEL
August 2003
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ABSOLUTE MAXIMUM RA TINGS
Symbol V CE S VECR V GE IC IC IC M ( ) Eas PTOT ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25C Collector Current (continuos) at TC = 100C Collector Current (pulsed) Single Pulse Energy Tc = 25C Total Dissipation at TC = 25C Derating Factor ESD (Human Body Model) Storage Temperature Operating Junction Temperature Value CLAMPED 18 CLAMPED 20 10 40 300 1 50 1 4 55 to 175 Unit V V V A A A
mJ
W W/C KV C
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1 62.5 C/W C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPEC IFIED) OFF
Symbol BV(CES) BV(ECR) BVGE ICES IGES RG E Parameter Clamped Voltage Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance Test Conditions IC = 2 mA, VGE = 0, Tj= - 40C to 150C IC = 75 mA, Tj= 25C IG = 2 mA VCE = 15 V, VGE= 0 ,Tj= 150 C VCE= 200 V, VGE= 0 ,Tj= 150C VGE = 10V , VCE = 0 20 Min. 380 18 12 16 10 100 700 Typ. 410 Max. 440 Unit V V V A A A K
ON ( 1 )
Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 A, TC= - 40C to 150C VGE =4.5V, IC = 10 A, Tj= 25C VGE =4.5V, IC = 20 A, Tj= 25C Min. 0.6 1.2 1.3 Typ. Max. 2.2 1.8 Unit V V V
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ELECTRICAL CHARACTERISTICS (CONTINUED) DYN AMIC
Symbol gfs Cies Coes Cres Qg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge VCE = 328V, IC = 10 A, VGE = 5V Test Conditions VCE = 15 V , IC= 10 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 18 1300 1 05 12 28 Max. Unit S pF pF pF nC
FUNCTIONAL CHARACTERISTICS
Symbol II U.I.S. Parameter Latching Current Functional Test Open Secondary Coil Test Conditions VClamp = 328 V, TC = 125 C RGOFF = 1K , VGE = 5 V RGOFF = 1K , L = 1 mH , Tc= 125C 13 Min. Typ. 40 Max. Unit A A
SW ITCHIN G ON
Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 328 V, IC = 10 A RG = 1K , VGE = 5 V VCC= 328 V, IC = 10 A RG=1K, VGE = 5 V VCC= 328 V, IC = 10 A, TC= 25 C RG = 1K, VGE = 5 V, TC= 125 C Min. Typ. 1300 270 60 2.4 2.6 Max. Unit ns ns A/s mJ mJ
SW ITCHIN G OFF
Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 328 V, IC = 10 A, RGE = 1K , VGE = 5 V Tj = 125 C Test Conditions Vcc = 328 V, IC = 10 A, RGE = 1K , VGE = 5 V Min. Typ. 3.6 2 8 1.4 5 5.7 2.7 9.2 2.8 8.7 Max. Unit s s s s mJ s s s s mJ
(1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail
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Output Characteristics Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
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Gate Threshold vs Temperature Normalized Clamping Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
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Total Switching Losses vs Collector Current Thermal Impedance
Turn-Off SOA
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive W aveform
Fig. 3: Test C ircuit For Inductive Load Switching And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
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D2PAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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1
STGB10NB40LZ
D PAK FOOTPRINT
2
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12. 8 20. 2 24. 4 100 30. 4 26. 4 13. 2 mm MIN. M AX . 330 0. 059 0. 504 0. 520 0795 0. 960 1. 039 3. 937 1. 197 BULK QTY 10 00 inch M I N. M AX . 12.992
TAPE MECHANICAL DATA
D IM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MA X. 10.7 15.9 1. 6 1. 61 1. 85 11.6 5. 0 4. 1 12.1 2. 1 inch MIN. M AX . 0. 413 0. 421 0. 618 0. 626 0. 059 0. 063 0. 062 0. 063 0. 065 0. 073 0. 449 0. 456 0. 189 0. 197 0. 153 0. 161 0. 468 0. 476 0. 075 0. 082 1. 574 0.35 0.0098 0.0137 0. 933 0. 956
BASE QTY 1 000
* o n s al es t y pe
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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