In addition to substantially reducing ON-state losses by minimizing the resistance value, the 600V device features an energy-optimized driver circuit which enables the MOSFET to drive higher currents at a lower VGS(th) (Voltage Gate Threshold). In fact, keeping the same threshold spread (2V), the range of VGS used to drive the device has been lowered, thus optimizing the drive and ensuring high noise immunity that prevents the circuit from switching on unintentionally.

The STD11NM60N features an excellent diode dv/dt capability as well as good avalanche performance allowing customers to keep operating temperatures within the typical working range. As a result of the very low conduction losses and reduced power dissipation, the device also helps customers cut heat-sink dimensions saving significant space board.

The small size of the chip, housed in very tiny DPAK/IPAK and TO-220FP packages, make it particularly suited to lighting applications such as High Power Factor electronic ballasts and High Intensity Discharge (HID) lamp electronic ballasts.

The STD11NM60N is available in volume now. Pricing is $0.90 in quantities of 10,000 pieces.

Technical Note
The outstanding performance of ST’s MDmesh^TM (Multiple Drain mesh^TM) technology is due to an innovative drain structure in which the drain is implemented as an array of partitions, with vertical p-type strips, as extension of the body, aligned with the thin, horizontal n-type source strips. In the new generation of MDmesh technology, MDmesh II, further enhancements of the p-strip array have delivered a reduction of up to 55% in the R_{DS (ON)} resistance value compared to the previous MDmesh generation, without sacrificing tight control of its temperature dependence.

Further information is available at www.st.com/pmos

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